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欧洲电力电子中心主任Dr. Leo Lorenz来我院交流访问

作者:郝振洋     审核人: 访问量:283发布时间:2018-06-29

应bat365正版唯一官网副院长阮新波教授邀请,欧洲电力电子中心主席、德国科学院院士Leo Lorenz教授,于2018年06月20至23日来bat365官网交流访问,并在东区教学楼为电气工程系的广大师生讲授了《Advanced Power Semiconductor Devices -Challenges and Solutions in Applications》(现代功率半导体器件—在应用中所面临的挑战与解决方法)系列课程。电气工程系共有130多名师生积极参加了本次学术交流与专业课程。

 

专业课程内容包括Power Device Development Trend(功率器件发展趋势)、Silicon Based Devices(Si材料器件)、WB Based Devices(宽禁带器件)、Understanding of Parasitics and Limits for Fast Switching Device(高频开关器件的寄生参数)、Driving and Protection(驱动和保护)、Packing Technologies(封装技术)、Thermal Management and Reliability(热处理和可靠性)等若干个部分。

 

在为学期四天的授课过程中,Lorenz教授系统介绍了功率半导体器件的原理、发展及其应用。不仅深入浅出地讲解了各类典型器件的物理基础,同时针对功率管的寄生参数,介绍了功率器件在应用时可能遇到的问题以及解决的方法,并介绍了相关驱动电路等相关设计方法,此外,Lorenz教授还介绍了目前基于SiC、GaN等材料的最新功率半导体的前沿技术。授课之余,Lorenz教授与广大教师与学生进行广泛交流,回答了学生提出的功率器件与应用设计疑问,并针对功率半导体的未来研究前景和应用挑战与广大师生进行了深入探讨。四天的专业课程与学术交流令电气系师生受益匪浅,系统学习了半导体的专业基础课程,极大地拓宽了专业前沿视野。

 

Leo Lorenz教授介绍:

 

LEO LORENZ received the M.Eng. degree from Univ. of Berlin Germany in 1976 and the PhD. degree (First Class Hons.) from University of Munich in 1984. Dr. Lorenz is Founder of  ECPE (European Center of Power Electronics) and since the foundation in 2003, he is the president of this organization. He is currently Technology Advisor for New Power Semiconductor Devices at Infineon Technologies Munich. In this field, he has published more than 400 Journal/conference papers and is the owner of more than 40 patents.  Dr. Lorenz received several times the best paper Award at IEEE Conferences. He received the Siemens Innovation Award In 1996, 98 and 99, and in 2002 he received the Innovation Award from the German Industry Society. Beside these he received several high level IEEE Awards e.g. IEEE-ISPSD Outstanding Contributory Award in 2010 (Japan), the IEEE- Gerald Kliman Innovator Award in 2011 (USA) and the IEEE- William E. Newell Power Electronics Award in 2012 (USA).

 

课程题目与内容:

 

“Advanced Power semiconductor Devices - Challenges and Solutions in Applications”:The subject aims to introduce students the new power semiconductor device technologies with a focus on fast switching devices and the management of parasitic and limits on their applications. This course help the students have an understanding of the important power devices utilized in various fields and realize the major challenges in application. And it includes the following topics:

 

      1. Power Device Development Trend

 

      2. Understanding of Parasitics and Limits for Fast Switching Device

 

      3. Driving and Protection

 

      4. Packing Technologies

 

      5. Thermal management and Reliability

    

课程时间地与地点:

 

   06月20日上午9:00~12:00  D1教学楼202教室

 

06月21日上午9:00~12:00  D1教学楼302教室

 

06月22日上午9:00~12:00  D3教学楼302教室

 

06月23日上午9:00~12:00  D1教学楼202教室

 

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